Figure 1a shows the flowchart process of CZTS thin-film solar cells using ZnO 1-x Co x O δ as an alternative for the buffer layer with concentration of cobalt (x = 0.03, 0.06, 0.09, 0.12, 0.15), Fig. 1b shows the difference in concentration of Zn 1-x Co x O δ coated on CZTS surfaces, Fig. 1c is the sample design of CZTS solar cell thin-film ...
Electrodeposition and characterization of cobalt thin films. Potentiostatic electrolysis was carried out for 1 h at 60 °C to deposit cobalt films on copper substrate from all four employed ionic liquid analogues with identical Co 2+ concentration (0.5 M CoCl 2). Representative samples of Co films were obtained by applying potentials of −0.9 ...
Fig. 8 presents the X-ray diffraction (XRD) analysis of Zn x Co 1 − x S thin films with varying concentrations of zinc and cobalt. The XRD data for Sample D indicates that the films exhibit a polycrystalline structure, with prominent peaks observed at 2θ values of 7.20°, 12.48°, 20.10°, 38.00°, and 58.02°.
The objectives of the study were to optimize the solar absorptance of cobalt copper oxides thin films via dip-coating method. The parameters studied are concentrations of cobalt and copper, copper/cobalt concentration ratios and dip-speed whereby they are directly correlated to the thickness of the thin films which ultimately influences their solar absorptance.
The grain structure of electrodeposited Cobalt is important to device electrical and reliability performance. This paper describes thermal annealing studies performed on electroplated blanket and pattern Cobalt wafers. A systematic study of Co film properties and effect of various anneal parameters such as temperature, time, hydrogen pressure and …
Williamson-Hall plot analysis reveals that the Co3O4 film prepared using cobalt chloride is of crystallite size 28.59 nm and undergoes tensile strain, while the film prepared using cobalt nitrate ...
DOI: 10.1016/J.IJLEO.2016.03.008 Corpus ID: 124460291; Cobalt oxide thin films prepared by NSP technique: Impact of molar concentration on the structural, optical, morphological and electrical properties
Due to its unique chemical and physical properties, electrodeposited cobalt has a variety of applications, typically including storage medium [1], battery electrode material [2, 3], wear-resistant component [4], MEMS magnetic actuator [5], industrial catalyst [6] and protective films [7], etc.The properties and appearance of cobalt film can be specially tailored by adding …
X-ray diffraction pattern (XRD) of tungsten oxide thin films with cobalt doping (with 0%, 5%, 10%, 15%, 20%, 30%) before and after annealing at T = 500 °C in Figs. 3 and 4. shown. As shown in Fig. 3, all films are "amorphous" before annealing. In Fig. 4a, the XRD spectrum is related to …
We compared the doping efficiency of incorporating cobalt in ZnO nanostructured samples doped with cobalt via cobalt nitrate and cobalt chloride. The concentration of cobalt incorporated into the ZnO matrix was precisely …
The etch rate, etch selectivity, and etch profile of the cobalt thin films were investigated by varying the gas concentration in the Cl 2 /Ar and Cl 2 /O 2 /Ar gas mixtures. …
Copper-doped cobalt oxide (Cu:Co3O4) films have been prepared by spray pyrolysis (SP) method onto glass substrate at (350) C with different copper doping concentrations (0%, 1%, 3%, 5%, 7%, 9%) M ...
Co–Ni thin films alloys were deposited on ruthenium substrates by the electrochemical method from chloride bath at pH 3.8. The effect of cobalt content on the …
The NiO thin film doped with 2% cobalt concentration displayed the minimum average crystallite size (9.72 nm) and enhanced at high concentration (11–13 nm). The …
Oxygen mass uptake was measured in 1,4-polybutadiene (PB) films undergoing cobalt-catalyzed oxidation in air. Films thicker than approximately 50 μm showed an increase in oxygen uptake per unit polymer mass as film thickness increased, while oxygen uptake per unit film area remained independent of thickness, suggesting that oxidation was heterogeneous …
Analytical grade cobalt chloride hexahydrate [CoCl 2.6H 2 O], ferric (III) nitrate (FeN 3 O 9) neodymium (III) acetate (Nd(O 2 C 2 H 3) 3.H 2 O) were used as the precursors for cobalt, ferrite and neodymium atoms respectively to deposit the CoFe 2 O 4:Nd thin films on bare soda lime glass substrate using nebulizer spray pyrolysis technique. 0.05 M and 0.1 M …
Cobalt is regarded as one of the most promising alternatives to conventional Ta liner besides ruthenium [1], [2], [3].However, there is a lack of details regarding the inplane resistivity for thin cobalt films on the range of 5 nm.Previous studies [4], [5] focus on ultra-low (monolayer region) or higher thickness (>28 nm) ranges leaving a gap in the region of interest.
a) Cu 2p SR-XPS spectra of copper cobalt thin film coatings synthesized using various concentrations, b-d) decoupling of Cu 2p3/2 of copper cobalt thin film coatings synthesized using various concentrations 24 Page 25 of 28 t us cr ip an M d te ep Ac c Fig. 4.
Cubic cobalt oxide (Co 3 O 4) thin films are deposited using cobalt chloride hexahydrate as precursor by nebulizer spray pyrolysis technique with different molar concentrations.The structural, optical, morphological and electrical properties are investigated. X-ray diffraction (XRD) analysis shows the polycrystalline nature of the films with cubic structure …
Preparation of the catalysts. Undoped ZnO and cobalt-doped ZnO (Co:ZnO) films were synthesized using the spray pyrolysis method. Dissolving zinc chloride (ZnCl 2) into 400 mL of distilled water to get a solution of 0.08 M.Thereafter, drop by drop to get a clear solution, 5 mL of hydrochloride acid (HCl) were added and stirred for 20 min. Cobalt chloride hexahydrate (CoCl …
Within this work, we report the controlled thermal oxidation process of cobalt thin film deposited on glass substrate, using an electron beam evaporation technique and their …
The CZTS thin films at high cobalt concentrations may become less efficient at absorbing photons in the visible spectrum, resulting in reduced EQE. The defects created as a result of excessive cobalt doping can trap and recombine photo generated charge carriers, reducing the overall charge carrier collection efficiency and thus lowering the EQE.
In this study, WO3:Co thin films with different percentages of cobalt concentration were deposited by spray pyrolysis on glass substrates at T = 400 °C and annealed at T = 500 °C for 1 h in the ...
After deposition, the films were cooled to room temperature at a rate of about 5 C min-1 at constant oxygen pressure. They were normally deposited at 600 C, but some films were deposited at higher or lower temperature (500-700 C). The oxygen pressure was varied in the range 2 × 10-4 – 10 Pa. In addition, we have deposited films on many other
The synthesis and characterization of cobalt hydroxides generated from cobalt chloride precursors at various concentrations (0.1 to 0.5 M) by using cathodic electrochemical deposition technique for prospective energy storage application. The Co(OH)2 thin films were discovered to have a crystalline structure with a crystallite size of ~ 40 nanometers, particle …
In this study, XRD was employed to probe the structural parameters of undoped and Ti-Co thin films, with cobalt dopant concentrations ranging from 0.1% to 0.5%. The XRD patterns, depicted in Figure 2 A, reveal highly crystalline films, exhibiting peak positions consistent with the TiO 2 phase, in alignment with the reported data.
This report will experimentally verify the different manifestations of cobalt silicide film agglomeration, develop a model which provides unique criteria for the grain agglomeration, …
This report reviews the state-of-the art chemistry and deposition techniques for cobalt thin films, highlighting innovations in cobalt metal-organic chemical vapor deposition (MOCVD), plasma and thermal atomic layer …
We report investigations of the optical band gap and the current conduction in cobalt-doped BiFeO3 (BFO)-based thin film devices. It is widely believed that oxygen vacancies play a significant role in determining the current conduction in these devices. As the doping concentration of cobalt increased from 0 mol% to 10 mol%, the optical band gap of doped …
A stable photoresponse under both standard AM 1.5G and NIR spectra has been investigated for all doped films. As cobalt concentration increased, the photosensitivity of sulfurized films increases until the doping level of 4 at%. It then decreases due to the possible carrier recombination at the point defects and Shockley-Read-Hall recombination ...